Vol 4 Issue 4 October 2017-December 2017
SOURISH CHATTERJEE, SNEHASISH SAHA, DR. RAJU BASAK
Abstract:Tunneling field effect transistors (TFETs) have recently attracted considerable interest because of their potential use in low power logic applications. The major advantage of tunnel transistors is the possibility to achieve less than 60 mV/decade sub-threshold swing, which is the thermionic limit in conventional MOSFETs. Previously the tunnelling behaviour of the TFET is modelled by the reverse-biased Zener diode. This paper explored the cut in voltage and dynamic resistance of that Zener diode which helps to generate an effective MATLAB algorithm to facilitate efficient circuit design and simulation that well captures the electrical characteristics of the n-channel TFET.
Keywords:Tunneling field effect transistor, MATLAB algorithm, simulation, tunneling, dynamic resistance.
Title:A MATLAB Simulation Approach to Optimize the Electrical Characteristics of TFET & Estimation of Dynamic Resistance
Author:SOURISH CHATTERJEE, SNEHASISH SAHA, DR. RAJU BASAK
ISSN 2349-7815
International Journal of Recent Research in Electrical and Electronics Engineering (IJRREEE)
Paper Publications
